| 1. | Measuring of minority - carrier lifetime in silicon single crystal by photoconductive decay method
用光电导衰减法测量硅单晶中少数载流子的寿命 |
| 2. | Standard test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconductivity decay
硅和锗体内少数载流子寿命测定光电导衰减法 |
| 3. | Sinx thin film can improve the minor carrier lifetime of both mono and poly silicon by the simultaneous surface and bulk passivation
9 ）的提高；先沉积氮化硅薄膜再氢等离子体处理能得到更好的钝化效果。 |
| 4. | The most aim is to found the rule of carbon effects oxygen deposition and the change of minor carrier lifetime in annealing
其主要目的是通过不同温度的热处理，发现碳对氧沉淀影响的规律，以及热处理过程中硅片样品少子寿命的变化。 |
| 5. | A model of the minority carrier lifetime damage constant is presented . the model is proved to be reasonable by good match with experimental data
结合具体的试验条件，证明了所得出的电子辐照4h - sic少子寿命损伤系数的模型是合理的。 |
| 6. | Testing of materials for semiconductor technology - measurement of carrier lifetime in silicon single crystals - recombination carrier lifetime at low injection by photoconductivity method
半导体工艺材料的试验.硅单晶中载流子寿命的测量.用 |
| 7. | In the third one we investigated the measure of minority carrier lifetime in silicon solar cells by the photo - induced open - circuit voltage decay ( ocvd )
该部分研究对工业化生产具有参考价值。第三部分研究了采用开路电压法测量晶体硅太阳电池的少子寿命。 |
| 8. | The design and analysis of vertical pnp transistor was accomplished through the relationship between carriers lifetime of epitaxy layer and current gain , rate of surface combination and leakage current , carriers lifetime of epitaxy layer and switch speed
从外延层载流子寿命与晶体管放大倍数，表面复合率与漏电流，以及外延层载流子寿命与晶体管开关速度等方面对于输出级纵向pnp管进行了较为详细的设计与分析，达到了电路中对输出级纵向pnp管主要参数指标的要求。 |
| 9. | We define the recombination time of excess electrons in p field as the minority carrier lifetime . in theory , we developed the equation between excess minority carriers lifetime and the open - circuit voltage decay ; moreover , the effect of capacitance to general open - circuit voltage is also investigated . both different efficiency solar cells are measured by the method and showed the relations between the minority carrier lifetime and the performance of solar cells , which provides great useful guidelines for fabricating high - efficiency silicon solar cell in industry
根据太阳电池的工作原理，详细地论述了用脉冲光源照射n / p结太阳电池时光电压的产生，理论上给出了注入p区的电子复合带来的开路电压与少子寿命的关系，也研究了n / p结势垒电容放电对开路电压衰减的影响关系，推导了利用开路电压随时间衰减的关系来测量少数载流子寿命的理论公式。 |
| 10. | To achieve this aim , the effect of oxygen and carbon content on the solar cell conversion efficiency are studied in this thesis . three parts are studied in our work , firstly , the effect of annealing on the oxygen and carbon content and minor carrier lifetime of cz - si are studied , then put it into the process of solar cell and compare the capability of solar cell in two process
作为该项研究的先期工作，首先以p型( 100 )太阳电池用直拉硅片为实验样品，摸索出热退火的最佳处理温度；然后用常规工艺制备了单晶硅太阳电池，测试效率；结果发现用经过热处理的硅片衬底制备的太阳电池比用没有经过热处理的硅片衬底制备的太阳电池其效率有明显改善。 |
